Movable chamber liner plasma confinement screen combination for plasma processing apparatuses

ABSTRACT

A movable symmetric chamber liner in a plasma reaction chamber, for protecting the plasma reaction chamber, enhancing the plasma density and uniformity, and reducing process gas consumption, comprising a cylindrical wall, a bottom wall with a plurality of openings, a raised inner rim with an embedded heater, heater contacts, and RF ground return contacts. The chamber liner is moved by actuators between an upper position at which substrates can be transferred into and out of the chamber, and a lower position at which substrate are processed in the chamber. The actuators also provide electrical connection to the heater and RF ground return contacts.

BACKGROUND

With each successive semiconductor technology generation, waferdiameters tend to increase and transistor sizes decrease, resulting inthe need for an ever higher degree of accuracy and repeatability inwafer processing. Semiconductor substrate materials, such as siliconwafers, are processed by techniques which include the use of vacuumchambers. These techniques include non plasma applications such aselectron beam evaporation, as well as plasma applications, such assputter deposition, plasma-enhanced chemical vapor deposition (PECVD),resist strip, and plasma etch.

Plasma processing systems available today are among those semiconductorfabrication tools which are subject to an increasing need for improvedaccuracy and repeatability. An important success metric for plasmaprocessing systems is increased uniformity, which includes uniformity ofprocess results on a semiconductor substrate surface as well asuniformity of process results of a succession of wafers processed withnominally the same input parameters. Continuous improvement of on-waferuniformity is desirable. Among other things, this calls for plasmachambers with improved uniformity, consistency and self diagnostics.

For example, poly-silicon gate etching is driving towards smaller andsmaller critical dimension uniformity (CDU) to be achieved across asubstrate of about 300 mm in diameter. Such a variation could be due toradial variation in substrate temperature near the edge, plasmachemistry or density, an overhanging edge ring, or other constraints.The CDU requirements are expected to become more stringent with thecontinuing reduction in node size.

SUMMARY

A chamber liner in a plasma reaction chamber for processingsemiconductor substrates is described herein. This chamber liner issymmetric in shape, electrical grounding and temperature. Actuators canmove the chamber liner along its axis in order to facilitate substrateloading and unloading. This chamber liner comprises a heater in theproximity of the inner perimeter. The power for the heater and theelectrical grounding of the chamber liner are provided throughelectrical receptacles on the bottom of the chamber liner and electricalwiring inside the actuators.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross sectional schematic of a plasma reaction chamber,comprising a movable, symmetric, and heated chamber liner wherein thechamber liner is at a lower position for normal operation.

FIG. 2 is a cross sectional schematic of the plasma reaction chamber inFIG. 1, wherein the chamber liner is at an upper position for substrateloading and unloading.

FIG. 3 is an isometric top view of a chamber liner in accordance of oneembodiment.

FIG. 4 is a top view of the chamber liner in FIG. 3.

FIG. 5 is a cross sectional schematic of the chamber liner in FIG. 3.

FIG. 6 is an enlarged cross sectional schematic of detail A in FIG. 5.

FIG. 7 is an enlarged schematic of a portion of a different crosssection of the chamber liner in FIG. 3.

FIG. 8A is a bottom view of the chamber liner in FIG. 3.

FIG. 8B is an enlarged view of the portion A in FIG. 8A.

DETAILED DESCRIPTION

Plasma reaction chambers often include a chamber liner. The chamberliner serves several functions.

First, a chamber liner can be used to confine the plasma. The presenceof a chamber liner in the proximity of the plasma can change thedistribution of the electric field, confine the plasma essentiallyinside the chamber liner and increase the plasma density.

Second, the chamber liner may be used to protect the plasma reactionchamber by preventing the plasma from eroding other parts of the plasmareaction chamber and thus protect the plasma reaction chamber fromdamage. A chamber liner is usually a consumable part which can becleaned and/or replaced periodically.

Third, a chamber liner can enhance the process gas pressure uniformity.The process gas pressure directly affects the reaction rate. Therefore,to maintain a uniform process gas pressure distribution above asemiconductor substrate undergoing plasma processing helps maintainuniform critical dimensions in device dies on the substrate. Thepressure in a typical plasma reaction chamber is controlled byintroducing process gas and evacuating the chamber at the same time.Without any restriction on process gas flow in the plasma reactionchamber, the process gas pressure may form a gradient from a relativelyhigh pressure near the outlet of the gas feed to a relatively lowpressure near the evacuation port. A chamber liner which partiallyrestricts the process gas flow may reduce the pressure gradient insidethe chamber liner. Another benefit is that the chamber liner can confinethe process gas to a smaller volume and thus lower the feeding rate andconsumption rate of the process gas.

These benefits of a chamber liner would depend on various features. Fora chamber liner having an outer wall extending above the substratesurface, to achieve a high degree of uniformity of process gas pressureand plasma density, the chamber liner is preferably symmetric and freeof openings in the outer wall. Such a symmetric chamber liner, if fixedin place, would block transfer of a substrate into and out of thechamber, hence require breaking the vacuum in the chamber for substratetransfer, and lead to reduced efficiency.

A movable symmetric chamber liner is described herein. This chamberliner can be raised or lowered to allow access to the substrate supportfrom the side when loading and unloading a substrate, thus combining theadvantages of a symmetric chamber liner and a side-loading plasmareaction chamber.

FIG. 1 is a cross sectional schematic of a plasma reaction chamber 100,comprising a movable, symmetric, and heated chamber liner 200.

The plasma reaction chamber 100 comprises a chamber wall 9 and adielectric window 13 (e.g. a planar dielectric window of uniformthickness). Disposed above the dielectric window 13 is an antenna 11.The antenna 11 can be a planar multiturn spiral coil, a non-planarmultiturn coil, or an antenna having another shape, powered by asuitable RF source and suitable RF impedance matching circuitry (notshown) that inductively couples RF energy into the chamber 100 togenerate a plasma (e.g. a high density plasma). A gas line 14 connectedto a gas source 15 supplies process gases into the chamber 100.

Directly below the dielectric window 13, is a semiconductor substrate 5being processed. The semiconductor substrate 5 is supported on asubstrate support 6 incorporating a lower electrode which can be RFbiased. The substrate support 6 may comprise one or more dielectricrings (not shown) fitted around its perimeter for electrical insulationand/or coupling RF into the semiconductor substrate and plasma. Thedetailed structure of the substrate support 6 is not shown for brevity.The substrate support 6 and a plurality of actuators 7 may be enclosedin a supporting member 19 and a removable bottom plate 18 mounted to thechamber wall 9. Electrical connections and gas feeds to the substratesupport 6 and actuators 7 may be provided through feedthroughs on thesupport member 19. An exemplary plasma reaction chamber is described incommonly assigned U.S. Pat. No. 6,013,155, which is hereby incorporatedby reference.

Around the substrate support 6 is a movable, symmetric, and heatedchamber liner 200. This chamber liner has a bottom wall 1 of uniformthickness, preferably with a plurality of gas passages. A continuousouter cylindrical wall 3 of uniform thickness is free of openings andextends upward axially from an outer perimeter of the bottom wall 1. Inorder to effectively confine plasma, an upper surface 3 a of thecylindrical wall 3 is preferably above the substrate 5 surface. An innerrim 2 of thickness greater than the bottom wall 1 extends upward axiallyfrom an inner perimeter of the bottom wall 1. The inner rim 2 houses anembedded heater 4 comprising one or more heating elements and extendingentirely or substantially around the inner rim 2. Alternatively (notshown), the inner rim 2 can have the same thickness as the bottom wall 1with the heater 4 attached on a lower surface of the inner rim 2. Theheater 4 is operable to heat the chamber liner 200 to an elevatedtemperature.

When loading and unloading a substrate, actuators 7 (e.g. fouractuators) move the chamber liner 200 along a vertical axis to an upperposition where the outer cylindrical wall 3 does not block the substrateloading port 10 (see FIG. 2). However, any suitable drive mechanism canbe used to move the chamber liner 200 between the upper and lowerpositions. In one embodiment, the actuators 7 are pneumatically drivenand enclosed in the support member 19. Gas feeds and/or electricalconnections are provided through feedthroughs on the support member 19.An actuator arm 7A in each actuator 7 is attached to an electricalreceptacle on the lower surface of the bottom wall 1. The actuator arm7A can be raised or lowered by supplying or not supplying pressurizedgas from an external gas source (not shown) to a pneumatically actuatedpiston or cylinder arranged (not shown) in the actuator 7. In a loadingor unloading sequence, the actuator arm 7A is raised to move the chamberliner 200 upward until the outer cylindrical wall 3 clears the substrateloading port 10. The substrate loading port 10 opens and a robotic arm21 transfers a substrate 5 into or out of the chamber. The substratesupport 6 preferably includes lift pins incorporated therein for raisingand lowering the substrate 5 above and onto the upper surface of thesubstrate support 6. After the substrate 5 is lowered onto the uppersurface, the actuator arm 7A is lowered to return the chamber liner 200to its lower position. It should be appreciated that the actuators 7 maybe driven by other suitable means, such as by an electric motor, cableactuated lifters, Scotch Yoke mechanisms or the like.

FIGS. 3 and 4 show a perspective view and planar top view, respectively,of an embodiment of the chamber liner 200. In this embodiment, thebottom wall has slot-shaped gas passages 20 arranged in a radial patternwith their longitudinal axes substantially perpendicular to the innerand outer circumference of the chamber liner. These gas passagesfunction as evacuation routes for evacuation of process gas andbyproducts. In addition, four bosses 400 a, 400 b, 400 c and 400 d,extend radially outward from the inner rim 2. These bosses are arranged90° apart along the inner rim 2. Each boss comprises an upper surfacecoextensive with the upper surface 2 a of the inner rim 2, a sloped sidesurface surrounding the perimeter of the boss, and a vertical mountinghole 29. These bosses provide a connection for a low impedance groundreturn path for the radio frequency (RF) power fed into the plasmareaction chamber. Two of the these bosses (power bosses), 400 a and 400c, house electrical leads connected to the heater 4.

The chamber liner 200 can be roughened, anodized, and/or have a ceramiccoating (e.g. plasma-sprayed yttria) on at least the plasma exposedsurfaces of the bottom wall 1, the outer cylindrical wall 3 and theinner rim 2. A preferred material of the chamber liner 200 is aluminum.

FIG. 5 shows a cross section through the two power bosses, 400 a and 400c, of the chamber liner 200 in FIGS. 3 and 4. The two power bosses, 400a and 400 c, are identical. FIG. 6 is an enlarged schematic of theregion A in FIG. 5. The circumferentially extending heater 4 ispreferably housed or embedded along substantially the entire length ofthe inner rim 2. In one embodiment, the heater 4 includes twohalf-circle heating elements, each extending along half of the inner rim2. Each heating element of the heaters 4 includes radially extending endsections through each power boss, 400 a and 400 c and the end sectionsare electrically connected to a power lead 30. The lead 30 is connectedto an electrical contact (heater contact) 70 on the lower surface of theliner. Concentric to the heater contact 70 is an annular electricallyinsulating sleeve 31, which electrically insulates the heater contact 70from the liner. Concentric to the annular electrically insulating sleeve31, is a conductor ring 32 (e.g. aluminum), in electrical contact withthe liner. This metal ring 32 comprises a lower outer flange whose lowersurface 71 (RF ground return button) is coextensive with the lowersurface of the liner. The RF ground return button 71 and the heatercontact 70 are preferably not anodized so that their exposed surfacescan be plated with a suitable corrosion resistant material, such as Ni,Rh, or Ir. The heater contact 70, insulating sleeve 31 and the RF groundreturn button 71 form an electrical receptacle in a power boss.

The actuator arms 7A under the power bosses 400 a and 400 c have aconcentric electrode structure, with a center wire 40 connected to apower supply 60 and in electrical and mechanical contact with the heatercontact 70, an annular electrically insulating sleeve 41, and an annularconductor 42 connected to the RF ground and in electrical and mechanicalcontact with the RF ground return button 71.

FIG. 7 shows a cross section through the boss 400 b. The boss 400 d isidentical to the boss 400 b. The heater 4 is housed or embedded in theinner rim 2. The boss 400 b does not comprise a heater contact or houseend sections of the heating elements. The RF ground return button 71 inthe boss 400 b is a circular disk of conductive material, such asnon-anodized aluminum, plated with a suitable corrosion resistantmaterial, such as Ni, Rh, or Ir. The RF ground return button 71 cancomprise a lower flange coextensive with the lower surface 2 b of theliner. In the bosses 400 b and 400 d, the RF return button 71 aloneforms an electrical receptacle.

The actuator arms 7A under the bosses 400 b and 400 d do not include awire for supplying power to the heater, but instead include a conductor42 connected to the RF ground and in electrical and mechanical contactwith the RF ground return button 71.

FIG. 8A is the bottom view of the chamber liner 200 in FIGS. 3 and 4.FIG. 8B shows an enlarged bottom view of an electrical receptacle undera power boss 400 a or 400 c. The heater contact 70 is at the center ofthe electrical receptacle. The insulator sleeve 31 surrounds the heatercontact 70. The RF ground return button 71 surrounds the insulatorsleeve 31.

It should be appreciated that any suitable heater arrangement can beused with various electrical connections to one or more heater elements.For example, the heater arrangement could be encased in rim 2 or locatedon the surface 2 b of the rim 2 and/or include a single heating element(e.g., circular rod, patterned film heater or the like), with twoterminals connected to two heater contacts in a single boss, while eachof the other bosses only comprises a RF ground return button. The RFground return buttons are preferably arranged symmetrically around thechamber liner to enhance uniformity of plasma confined by the chamberliner.

It is also possible to rearrange the end sections of the heatingelements so that they extend vertically directly below the inner rim 2,which eliminates the bosses 400 a-d, maintains a circularly symmetricinner rim and enhances the uniformity of the plasma confined by thechamber liner.

The embodiment of the chamber liner depicted in FIGS. 3-8 may bemanufactured by the following steps: hydroforming a metal plate to formthe bottom wall 1 and the outer cylindrical wall 3; machining a piece ofmetal or casting molten metal to form the inner rim 2; embedding orattaching the heater 4 to the inner rim 2; welding (e.g. friction-stirwelding) the assembly of the bottom wall 1 and the outer cylindricalwall 3 to the inner rim 2 along the welding line 300; machining theslots 20 in the bottom wall 1; optionally anodizing plasma exposedsurfaces; and optionally coating plasma exposed surfaces with thermallysprayed yttria.

An exemplary method of processing a semiconductor substrate in theplasma reaction chamber 100 may comprise: (a) transferring asemiconductor substrate 5 into the plasma reaction chamber 100 andlowering the semiconductor substrate 5 onto the substrate support 6; (b)moving the chamber liner 200 to a lower position by lowering theactuator arms 7 a; (c) heating the chamber liner 200 to a desiredtemperature (e.g. from 20 to 50° C., from 50 to 100° C., or from 100 to200° C.) by activating the heater 4; (d) feeding a process gas into thechamber 100 and generating a plasma with the RF power source; (e)processing (e.g. plasma etching) the semiconductor substrate 5 with theplasma; (f) moving the chamber liner 200 with the actuator 7 to an upperposition; (g) transferring the semiconductor substrate 5 out of theplasma reaction chamber 100; and repeating (a)-(g) with anothersubstrate.

While the invention has been described in detail with reference tospecific embodiments thereof, it will be apparent to those skilled inthe art that various changes and modifications can be made, andequivalents employed, without departing from the scope of the appendedclaims. For instance, the movable liner can be incorporated in acapacitively coupled plasma chamber.

1. (canceled)
 2. The method of claim 19, wherein the inner rim includesa sloped surface which extends axially upward from an inner perimeter ofthe bottom wall.
 3. The method of claim 19, further comprising embeddingthe heater in the inner rim.
 4. The method of claim 19, wherein theinner rim comprises four radially outwardly extending bosses spaced 90°apart, at least one of the bosses housing electrical connections to theheater.
 5. The method of claim 19, wherein the outer cylindrical walland the bottom wall consist of a single plate of hydroformed aluminum.6. The method of claim 19, further comprising friction-stir welding theinner rim to the bottom wall.
 7. The method of claim 19, wherein: atleast one electrical receptacle is on a lower surface of the liner, theat least one electrical receptacle comprising one or more conductivecontacts (heater contacts) electrically connected to the heater andelectrically insulated from the liner; at least one electricalreceptacle is on the lower surface of the liner, the at least oneelectrical receptacle comprising a conductive contact (RF ground returnbutton) electrically connected to the liner and electrically insulatedfrom any heater contacts.
 8. The method of claim 7, wherein theelectrical receptacles are azimuthally symmetrically positioned.
 9. Themethod of claim 7, wherein the material of the exposed surfaces of theheater contacts and the exposed surfaces of the RF ground return buttonsis nickel, rhodium, iridium or alloy thereof.
 10. The method of claim 7,wherein: two of the electrical receptacles comprise heater contacts, andeach of the electrical receptacles comprises an RF ground return button.11. The method of claim 19, wherein the openings in the bottom wall areslots arranged in a radial pattern and their longitudinal axes aresubstantially perpendicular to inner and outer circumferences of thechamber liner.
 12. The method of claim 19, wherein the bottom wall, theouter cylindrical wall and the inner rim are anodized aluminum, orroughened and anodized aluminum.
 13. The method of claim 19, wherein theheater comprises two semicircular heater elements.
 14. The method ofclaim 19, further comprising coating plasma exposed surfaces of thebottom wall, the outer cylindrical wall and the inner rim with a ceramiccoating.
 15. The method of claim 13, wherein each of the semicircularheater elements includes a pair of radially outwardly extending segmentsat opposite ends thereof.
 16. (canceled)
 17. (canceled)
 18. (canceled)19. A method of manufacturing a movable chamber liner, comprising:hydroforming a metal plate to form an assembly consisting of a bottomwall and an outer cylindrical wall; machining a piece of metal orcasting molten metal to form an inner rim; supporting a heater inthermal contact with the inner rim; welding the hydroformed assembly ofthe bottom wall and the outer cylindrical wall to the inner rim; andmachining or drilling openings in the bottom wall to form a movablechamber liner configured to fit around a perimeter of a substratesupport, in a plasma reaction chamber useful for processing asemiconductor substrate.
 20. A method of processing semiconductorsubstrates in a plasma reaction chamber comprising a moveable chamberliner manufactured by the method of claim 19, the method comprising: (a)loading a semiconductor substrate into the plasma reaction chamber andpositioning the semiconductor substrate on a substrate support; (b)moving actuators to lower the chamber liner to a lower position; (c)adjusting the temperature of the chamber liner with the heater; (d)feeding a process gas into the chamber and energizing the process gasinto a plasma with a RF power source; (e) plasma etching thesemiconductor substrate with the plasma; (f) moving the actuators toraise the chamber liner to an upper position; (g) transferring thesemiconductor substrate out of the plasma reaction chamber.